氮化镓充电器和普通的充电器有什么区别？ 第1页

       References    M. Pavier, A. Woodworth, A. Sawle, R. Monteiro, C. Blake, and J. Chiu, “Understanding the effect of power MOSFET package parasitic on VRM circuit efficiency at frequencies  above 1 MHz,” in Proc. PCIM Eur., May 2003, pp. 279–284.  D. Reusch, J. Strydom, “Understanding the Effect of PCB Layout on Circuit Performance in a High Frequency Gallium Nitride Based Point of Load Converter,” Applied Power  Electronics Conference, APEC 2013, pp.649-655, 16-21 March 2013.  J.T. Strydom, “eGaN® FET- Silicon Power Shoot-Out Volume 8: Envelope Tracking,” Power electronics magazine, April 2012, http://powerelectronics.com/gan-transistors/egan-fetsilicon-power-shoot-out-volume-8-envelope-tracking  J. Strydom, “eGaN® FET- Silicon Power Shoot-Out Volume 11: Optimizing FET On-Resistance”, Power Electronics Technology, Oct. 2012, http://powerelectronics.com/discretesemis/gan_transistors/egan-fet-silicon-power-shoot-out-volume-11-optimizing-fet-on-resistance-1001/  EPC8005 datasheet, http://www.epc-co.com/epc/Products/eGaNFETs/EPC8005.aspx  Alex Q. Huang, “New Unipolor Switching Power Device Figures of Merit,” IEEE Electron Device Lett., vol. 25, pp. 298-301, 2004.  Yucheng Ying, “Device selection criteria----based on loss modeling and Figure of Merit”, Thesis of Master of Science in Electrical Engineering of Virginia Tech, 2008.  LM5113TM half bridge driver, http://www.ti.com/product/lm5113  D. Čučak, M. Vasić, O. García, J. A. Oliver, P. Alou, J. A. Cobos et al, “Application of eGaN FETs for highly efficient Radio Frequency Power Amplifier,” Conference on Integrated  Power Electronics Systems, CIPS 2012, paper P22, March 2012.  M. Norris and D. Maksimovic, 10 MHz Large Signal Bandwidth, 95% Efficient Power Supply for 3G-4G Cell Phone Base Stations,” Applied Power Electronics Conference, APEC  2012, pp. 7-13, Feb. 2012.  M. A. De Rooij and J. T. Strydom, “eGaN® FETs in Low Power Wireless Energy Converters”, Electro-Chemical Society transactions on GaN Power Transistors and Converters, 2013,  Vol. 50, No. 3, pp 377 - 388  M. de Rooij, J. Strydom, “eGaN® FET- Silicon Power Shoot-Out Volume 9: Low Power Wireless Energy Converters”, Power Electronics Technology, June. 2012,  http://powerelectronics.com/discrete-power-semis/egan-fet-silicon-shoot-out-vol-9-wireless-power-converters  EPC2014 datasheet, http://www.epc-co.com/epc/Products/eGaNFETs/EPC2014.aspx  http://en.wikipedia.org/wiki/ISM_band  Kalyan Siddabattula, “Wireless Power System Design Component And Magnetics Selection”, Texas Instruments presentation on wireless technology, http://e2e.ti.com/support/  power_management/wireless_power/m/mediagallery/526153.aspx  Agilent Network Analysis Applying the 8510 TRL Calibration for Non-Coaxial Measurements Product Note 8510-8A  J. M. Rollett, “Stability and Power-Gain Invariants of Linear Twoports”, IRE Transactions on Circuit Theory, Vol. 9, Issue 1, March 1962, pp 29 – 32  S. J. Orfanidis, “Electromagnetic Waves and Antennas”, Chapter 13, http://www.ece.rutgers.edu/~orfanidi/ewa/  Ken Payne, “Practical RF Amplifier Design Using the Available Gain Procedure and the Advanced Design System EM/Circuit Co-Simulation Capability”, Agilent Technologies  White Paper, 2008, www.agilent.com  G. Gonzales, “Microwave Transistor Amplifiers”, Second Edition 1997, Prentice Hall ISBN 0-13-254335-4  D. M. Pozar, “Microwave Engineering”, Third Edition 2005, J. Wiley ISBN 0-471-44878-8